Exploring the conduction in atomic-sized metallic constrictions created by controlled ion etching.

A novel technique to establish atomic-sized contacts in metallic materials is shown. It is based on etching a (sub)micrometric electrode via a low-energy focused ion beam. The in situ measurements of the nanoconstriction resistance during the etching process permit control of the formation of atomic-sized constrictions with milling time, observing steps in the conductance in the range of the conductance quantum (G(0) = 2e(2)/h), just before entering the tunnelling regime. These constrictions are highly stable with time due to the adherence to a substrate, which allows further studies such as the detailed current-voltage transport investigation reported here. Scanning electron microscopy images are used to correlate the etching process and the constriction microstructure. The high control achieved in the process makes us suggest this technique as a promising route to study physical phenomena in the verge of the metal-tunnel conduction crossover.